Advanced MEMS and NEMS Technologies
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Abstract
Abstract
Enhancing the proof mass without enlarging the chip area or introducing structural asymmetry is a central challenge in the development of low-noise microelectromechanical system (MEMS) accelerometers. Here, we present a symmetric triple-layer MOEMS accelerometer and analyze its device-level sensitivity trade-off, cross-axis coupling behavior, and dynamic consistency between measurement and finite-element simulations. The proposed sensing element sandwiches one without-beam mass layer between two identical with-beam layers, thereby increasing the effective proof mass while preserving mirror symmetry. A lumped-parameter model is developed to explain the sensitivity trade-off among single-layer, asymmetric double-layer, and symmetric triple-layer configurations. Finite-element simulations are used to distinguish translational cross-axis coupling from rotational cross-axis coupling. The experimental characterization of one packaged triple-layer prototype demonstrates a mechanical sensitivity of 193.91 µm/(m/s2), a 10 min output RMS fluctuation of 1.81 µg, and a measured first-order resonant frequency of 11.23 Hz, in close agreement with the tolerance-included finite-element prediction of 11.40 Hz. The resonance bandwidth further yields an apparent package-level quality factor of approximately 374 under ambient pressure, providing additional characterization of the packaged device dynamics.
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@article{Li2026Device,
title = {Device-Level Modeling, Cross-Axis Analysis, and Optical Characterization of a Symmetric Triple-Layer MOEMS Accelerometer},
author = {Pengfei Li and Shuang Wu and Wenhui Yan and Yujie Xiong and Jiaxin Sun and Chaoyue Shi and Haiyan Wang and Xiaoxu Wang and Qianbo Lu},
journal = {Micromachines},
year = {2026},
doi = {10.3390/mi17080984},
url = {https://doi.org/10.3390/mi17080984}
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