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Novel cell-level erase for 3D NAND Flash memory

nanchang liang, Zhicheng Liu, Guokun Ma, Wu ShiWen and 4 more

Semiconductor Science and Technology | Jul 23, 2026

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This work proposed a novel cell-level erase scheme called Hole Pool (HP) erase by integrating the Cell-level Voltage (CV) scheme with the Source Acceptor Doping (SAD) structure, demonstrating its feasibility and applicability to highly stacked architectures.

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Abstract With advances in AI and the widespread adoption of NAND Flash technology imposing increasingly stringent performance requirements, conventional erase was unable to provide precise erasing in NAND Flash storage systems. This work proposed a novel cell-level erase scheme called Hole Pool (HP) erase by integrating the Cell-level Voltage (CV) scheme with the Source Acceptor Doping (SAD) structure. The technique was evaluated in 3D NAND Flash structures with different numbers of layers, in which stable electric field and charge variation characteristics were obtained, thereby demonstrating its feasibility and applicability to highly stacked architectures. The results demonstrated that the HP erase enabled precise cell-level erase and provided a viable solution for the future development of erase technology, advancing NAND Flash memory technology.

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Authors

Researchers on this paper

nanchang liang

first | Hubei University | ORCID 0009-0007-8792-0123

Zhicheng Liu

middle | Hubei University | ORCID 0000-0001-6539-511X

Guokun Ma

middle | Hubei University | ORCID 0009-0001-5542-9272

Wu ShiWen

middle | Hubei University

Liu X

middle | Hubei University

Lin Lv

middle | Hubei University | ORCID 0000-0002-2743-6491

Siyuan Li

middle | Hubei University | ORCID 0000-0002-9999-437X

Hao Wang

last | Hubei University | ORCID 0000-0002-4894-7653

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Citation

BibTeX

@article{liang2026Novel,
  title = {Novel cell-level erase for 3D NAND Flash memory},
  author = {nanchang liang and Zhicheng Liu and Guokun Ma and Wu ShiWen and Liu X and Lin Lv and Siyuan Li and Hao Wang},
  journal = {Semiconductor Science and Technology},
  year = {2026},
  doi = {10.1088/1361-6641/ae8f6e},
  url = {https://doi.org/10.1088/1361-6641/ae8f6e}
}

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