Ion-surface interactions and analysis Open access Peer reviewed

13 eV N+ ion beam induced chemical vapor deposition using dimethylamine

Satoru Yoshimura, Takae Takeuchi, Masato Kiuchi

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms | Oct 6, 2026

Abstract

Abstract

In this study, dimethylamine was used as the source gas for ion beam induced chemical vapor deposition. In this process, the dimethylamine was sprayed onto a substrate that was simultaneously exposed to Ar + or N + ion beams. No material was deposited when the substrate was irradiated with either 15, 24 or 53 eV Ar + ions or 22 or 52 eV N + ions in conjunction with a flow of dimethylamine. In contrast, a deposit was obtained using 13 eV N + ions with dimethylamine. An analysis using X-ray photoelectron spectroscopy established that the deposit comprised carbon nitride with a nitrogen to carbon atomic ratio of 0.88.

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Authors

Researchers on this paper

Satoru Yoshimura

first | The University of Osaka | ORCID 0000-0003-0614-6433

Takae Takeuchi

middle | The University of Osaka | ORCID 0000-0001-9523-3701

Masato Kiuchi

last | ORCID 0000-0002-6365-3952

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Citation

BibTeX

@article{Yoshimura2026beam,
  title = {13 eV N+ ion beam induced chemical vapor deposition using dimethylamine},
  author = {Satoru Yoshimura and Takae Takeuchi and Masato Kiuchi},
  journal = {Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms},
  year = {2026},
  doi = {10.1016/j.nimb.2026.166336},
  url = {https://doi.org/10.1016/j.nimb.2026.166336}
}

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