Abstract
Abstract
In this study, dimethylamine was used as the source gas for ion beam induced chemical vapor deposition. In this process, the dimethylamine was sprayed onto a substrate that was simultaneously exposed to Ar + or N + ion beams. No material was deposited when the substrate was irradiated with either 15, 24 or 53 eV Ar + ions or 22 or 52 eV N + ions in conjunction with a flow of dimethylamine. In contrast, a deposit was obtained using 13 eV N + ions with dimethylamine. An analysis using X-ray photoelectron spectroscopy established that the deposit comprised carbon nitride with a nitrogen to carbon atomic ratio of 0.88.
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@article{Yoshimura2026beam,
title = {13 eV N+ ion beam induced chemical vapor deposition using dimethylamine},
author = {Satoru Yoshimura and Takae Takeuchi and Masato Kiuchi},
journal = {Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms},
year = {2026},
doi = {10.1016/j.nimb.2026.166336},
url = {https://doi.org/10.1016/j.nimb.2026.166336}
}
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