Design and Optimization of High-G Graphene MEMS Acceleration Sensor

Abstract

Abstract

High-g accelerometers are in high demand across sectors such as aerospace, defense, and industrial inspection. This paper presents a MEMS accelerometer based on graphene piezoresistors, designed for precise acceleration measurement under sudden impacts, intense vibrations, and extreme conditions, such as engine fault diagnosis and weapon impact testing. A step-by-step structural optimization and simulation analysis were conducted using finite-element simulation. Taking the peak strain at the beam root, the first-order natural frequency, and the maximum equivalent stress as optimization objectives, progressive parametric optimization was sequentially performed on four progressive architectures: a simple beam, a beam mass, a beam mass with stress concentration grooves, and a beam mass with stress concentration grooves and symmetric masses. The results indicate that the introduction of a central mass enhances the peak strain by more than 15 times compared to the simple beam. The addition of stress concentration grooves further increases the strain by approximately 30%. Finally, the incorporation of symmetric masses yields a further 9% strain enhancement while reducing cross-axis sensitivity by 5.6%, effectively suppressing off-axis interference. The final structure achieves maximized strain while maintaining a first-order natural frequency above 200 kHz, with the maximum equivalent stress staying within the allowable limit. This optimal comprehensive performance provides essential technical support for high-performance graphene-based accelerometers. In addition to the mechanical structural optimization, the graphene piezoresistors were treated as surface sensing regions at the beam-root locations, and the area-averaged longitudinal strain was extracted as the input of a piezoresistive transduction model. The simulated strain was converted to resistance variation and bridge output voltage using a graphene gauge-factor-based readout model incorporating contact-resistance effects, thereby providing a sensor-level electromechanical performance estimation for the proposed high-g accelerometer.