Advanced Data Storage Technologies
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Abstract
Abstract
Abstract A model-bridging framework is developed to connect direct trapping (DT) and indirect trapping (IT) models for fastening threshold voltage (VT) distribution simulation by program and erase operations of 3-D NAND flash memory using a conversion ratio (CR), which is employed here as a model-dependent scaling factor. By equating volumetric trapping rates from validated IT-based formulations, CR captures dependencies on capture cross section, mobility, and electrical field, and is applied to adjust DT capture these parameters. The revised DT-based model with CR reproduces IT-level accuracy (less than 4% error with experiment-calibrated TCAD for ISPP operation), while achieving up to x1500 faster runtimes. It also shows physically intuitive tendency across various device parameters. For a 16 KB-scale simulation, the resulting VT distributions by DT-based model with CR reproduce the IT-based distributions. The proposed framework therefore provides a fast and practical route for large-scale VT distribution simulation of 3-D NAND flash memory.
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@article{Choi2026Capture,
title = {Capture-cross-section conversion ratio for compact models enabling fast V T distribution simulation of 3-D NAND flash memory},
author = {Haechan Choi and Sangmin Ahn and Jinil Yoo and Sungju Kim and Myung Jin and Hyungcheol Shin},
journal = {Japanese Journal of Applied Physics},
year = {2026},
doi = {10.35848/1347-4065/ae9c13},
url = {https://doi.org/10.35848/1347-4065/ae9c13}
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